The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe₄), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe₄ has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW^–1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼10⁹ cm Hz^1/2 W^–1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe₄, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe₄ for room temperature IR optoelectronic applications.

中文翻译：

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基于 ZrGeTe4 范德华材料的短波红外光电探测器可见光

范德华材料的自终止层状结构为红外 (IR) 光电器件带来了基本优势。这些主要与降低 IR 吸收体厚度时保持高内部量子效率的同时低噪声的潜力有关。在这项研究中，我们将一种新的范德华材料候选者碲化锆锗 (ZrGeTe ₄ ) 引入到越来越多的有前途的红外范德华材料中。我们发现块体形式 ZrGeTe ₄具有约 0.5 eV 的间接能带边缘，与之前的理论预测非常一致。该材料在高达 140 °C 的温度下仍保持稳定，即使在潮湿空气中储存超过 30 天，其成分变化也很小。我们展示了简单的概念验证广谱光电探测器，其响应率在可见光和短波红外波长范围内均高于 0.1 AW ^–1。这对应于 ∼10 ⁹ cm Hz ^1/2 W ^–1的特定探测率在室温下 λ = 1.4 μm。这些器件显示出约 4 个数量级的线性光响应与照明强度关系，以及约 50 ns 的快速上升/下降时间，也通过 5.9 MHz 的 3 dB 滚降频率验证。作为使用 ZrGeTe ₄进行光电检测的首次演示，在简单的概念验证设备上测量的这些特性显示了 ZrGeTe ₄在室温红外光电应用方面的令人兴奋的潜力。