A magnetic Bloch line (BL) is a nanoscale topological defect with a nontrivial topological charge. Herein, we propose a novel memory that utilizes current-driven BL motion. We demonstrate that it is possible to write and shift BLs using a spin-transfer-torque scheme. The writing efficiency and shifting velocity of the BL-based racetrack memory are better than or comparable to those of domain wall (DW)-based racetrack memory. Moreover, the current-driven BL motion is more robust against defects than the DW motion, suggesting that BL-motion-based memory can serve as a next-generation memory beyond the DW-motion-based racetrack memory.

中文翻译：

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基于拓扑布洛赫线电流感应运动的赛道记忆

磁性布洛赫线 (BL) 是一种具有非平凡拓扑电荷的纳米级拓扑缺陷。在此，我们提出了一种利用电流驱动的 BL 运动的新型存储器。我们证明可以使用自旋转移扭矩方案来写入和移动 BL。基于BL的赛道存储器的写入效率和移位速度优于或可与基于畴壁（DW）的赛道存储器相媲美。此外，电流驱动的 BL 运动比 DW 运动更能抵抗缺陷，这表明基于 BL 运动的内存可以作为超越基于 DW 运动的赛道内存的下一代内存。