We investigated the effect of device parameters on intermediate-frequency (IF) output power in sub-harmonic mixing by an anti-parallel diode pair based on Fermi-level managed barrier (FMB) diodes. The IF output power peaked as the local oscillator (LO) power increased due to the saturation of the FMB diode itself. The peak IF output power was found to increase as barrier height increased while it stayed nearly the same as the junction area increased. The lowest noise equivalent power of 4נ10^–19W Hz⁻¹ was obtained with an LO power of only 160 μW at a signal frequency of 304GHz.

中文翻译：

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通过费米能级管理势垒二极管在 300 GHz 频段进行低噪声次谐波混频

我们通过基于费米级管理势垒 (FMB) 二极管的反并联二极管对研究了设备参数对次谐波混频中中频 (IF) 输出功率的影响。由于 FMB 二极管本身饱和，当本地振荡器 (LO) 功率增加时，IF 输出功率达到峰值。发现峰值 IF 输出功率随着势垒高度的增加而增加，而随着结面积的增加，它几乎保持不变。4נ10 ^–19 W Hz ^-1的最低噪声等效功率是在 304GHz 信号频率下仅 160 μ W的 LO 功率获得的。