In this work, we analyse passivated emitter and rear cells (PERC), based on wafers made from seed manipulation for artificially controlled defects technique (SMART) monocrystalline silicon, magnetically grown and conventional Czochralski (mCz and Cz) silicon, and high-performance multicrystalline (hpm) silicon. All wafers were processed identically except for the hpm wafers, which received an acidic texture instead of random pyramids. The energy conversion efficiency η of the SMART cells of 21.4 % is similar to the mCz cells (21.5 %) while being more than higher than for the hpm cells. Furthermore, we here show for the first time that light- and elevated temperature-induced degradation (LeTID) is mitigated in hpm, Cz and SMART PERC cells without significant losses in initial efficiency by an adapted fast-firing process, incorporating slower firing ramps that can be used in industrial production. The cells that are fired with these ramps show no significant efficiency loss ( ) during LeTID testing at 75°C and 0.15 suns illumination for 1100 h, while the reference fast-firing process results in efficiency losses of due to LeTID. For Cz cells that have been treated to regenerate the boron–oxygen defect prior to LeTID testing, the maximum degradation was reduced from to .

中文翻译：

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通过在 SMART cast-monocrystalline、Czochralski 和高性能多晶硅的 p 型 PERC 电池中采用合适的烧制工艺来缓解 LeTID

在这项工作中，我们分析了钝化的发射极和背面电池 (PERC)，基于由人工控制缺陷技术 (SMART) 单晶硅、磁性生长和传统的 Czochralski (mCz 和 Cz) 硅以及高性能多晶硅的种子操作制成的晶片(hpm) 硅。除了 hpm 晶圆外，所有晶圆都以相同的方式处理，它接受酸性纹理而不是随机金字塔。SMART 电池的能量转换效率η为 21.4  %，与 mCz 电池（21.5  %）相似，但超过高于 hpm 细胞。此外，我们在此首次展示了在 hpm、Cz 和 SMART PERC 电池中，光和高温诱导的退化 (LeTID) 得到了缓解，而采用适应的快速烧制过程并没有显着降低初始效率，并结合了较慢的烧制斜坡可用于工业生产。在 75°C 和 0.15 太阳光照 1100 小时的 LeTID 测试期间，使用这些斜坡烧制的电池没有显示出显着的效率损失 ( 对于在 LeTID 测试之前已被处理以再生硼氧缺陷的 Cz 电池，最大降解从 减少到.