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Temperature characteristics of Ge/ZnS one-dimension photonic crystal for infrared camouflage
Optical Materials ( IF 3.9 ) Pub Date : 2021-09-14 , DOI: 10.1016/j.optmat.2021.111564
Zichen Deng 1 , Yarui Su 1 , Wei Gong 1 , Xian Wang 1 , Rongzhou Gong 1
Affiliation  

In this paper, we investigate the temperature characteristics of Ge/ZnS one-dimension photonic crystal film for infrared camouflage, which is demonstrated low infrared emissivity at room temperature. The prepared film exhibits infrared camouflage capability with variable temperatures up to 400 °C. The infrared emissivity is 0.091 for 3–5 μm and 0.128 for 8–14 μm respectively at 400 °C. The thermal images also indicate the reduction of thermal radiation with the radiation temperature of 112.3 °C, while the real object temperature is 400 °C. This work demonstrates the infrared camouflage performance of Ge/ZnS one-dimension photonic crystal at variable temperatures.



中文翻译:

红外伪装用Ge/ZnS一维光子晶体的温度特性

在本文中,我们研究了用于红外伪装的 Ge/ZnS 一维光子晶体薄膜的温度特性,该薄膜在室温下具有低红外发射率。制备的薄膜在高达 400°C 的可变温度下表现出红外伪装能力。在 400 °C 下,3-5 μm 的红外发射率分别为 0.091 和 8-14 μm 的 0.128。热图像还表明热辐射减少,辐射温度为112.3°C,而真实物体温度为400°C。这项工作证明了 Ge/ZnS 一维光子晶体在可变温度下的红外伪装性能。

更新日期:2021-09-15
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