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A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes
Instruments and Experimental Techniques ( IF 0.6 ) Pub Date : 2021-09-14 , DOI: 10.1134/s0020441221040230
A. V. Rozhkov 1
Affiliation  

Abstract

The prospect of using high-voltage GaAs drift step-recovery diodes for the formation of subnanosecond pulses is shown. The electrical circuit of a generator is described, which provides (with a total efficiency of at least 25%) the formation of pulses at a load of 50 Ω with an amplitude of up to 550 V, a voltage rise time of 0.43 ns, a full width at half maximum of 0.73 ns, and a repetition frequency of up to 200 kHz.



中文翻译:

基于砷化镓漂移阶跃恢复二极管的高压高频亚纳秒脉冲发生器

摘要

显示了使用高压 GaAs 漂移阶跃恢复二极管形成亚纳秒脉冲的前景。描述了发电机的电路,它提供(总效率至少为 25%)在 50 Ω 负载下形成脉冲,幅度高达 550 V,电压上升时间为 0.43 ns,半峰全宽为 0.73 ns,重复频率高达 200 kHz。

更新日期:2021-09-15
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