Abstract

A method for physical modeling of the influence of bulk leakage-current channels (dislocations) on the electrophysical and lighting characteristics of LEDs by connecting the p–n junction of an LED in parallel to an ohmic resistance or another p–n junction is described. The relationships that allow one to determine the change in the electrophysical and lighting characteristics of LEDs under the influence of various external factors (ionizing radiation, long-term operation, etc.) have been established. Using the obtained relationships, it is possible to determine the electrophysical characteristics of dislocations according to the changes in the electrophysical and lighting characteristics of LEDs, taking the role of dislocations into account. Based on the literature data, the efficiency of using the established relationships in the analysis of the characteristics of LEDs that are exposed to external impacts has been shown.

中文翻译：

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不同外部影响下 LED 错位连接的物理建模

摘要

通过将 LED 的p – n结与欧姆电阻或另一个p – n并联连接，对体泄漏电流通道（位错）对 LED 电物理和照明特性的影响进行物理建模的方法交界处进行了描述。已经建立了可以确定在各种外部因素（电离辐射、长期运行等）影响下 LED 电物理和照明特性变化的关系。使用获得的关系，可以根据LED的电物理和发光特性的变化来确定位错的电物理特性，同时考虑到位错的作用。根据文献数据，显示了在分析暴露于外部影响的 LED 特性时使用既定关系的效率。