Negative differential resistance (NDR) devices are adequate candidates for the functional devices applicable to the next-generation integrated circuit technology so-called “Beyond CMOS.” Here, a graphene velocity-modulation-barrier resonant-tunneling diode operating at room temperature is proposed. The current–voltage characteristics of the device are analyzed using the non-equilibrium Green's function technique. It is found that the Fermi velocity barrier in the well/barrier region manipulates the tunneling transmission probability by suppressing the Klein region and improving the resonant tunneling leading to NDR. For special values of velocity barriers, resonant states have maximum alignment with each other which increases peak current with a high peak to valley ratio (PVR). The width and the position of the NDR window are controlled and engineered by the device dimensions and the height of potential barriers. The smaller the device showed the better the NDR properties such as larger current density and maximum PVR. Taken together, the results reveal that adequate magnitude of the Fermi velocity in graphene barrier can be an impressive concept for the fabrication of emerging tunneling devices.

中文翻译：

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费米速度调制诱导石墨烯双势垒谐振隧道二极管中的低偏置负微分电阻

负差分电阻 (NDR) 器件是适用于所谓“超越 CMOS”的下一代集成电路技术的功能器件的合适候选。在这里，提出了一种在室温下工作的石墨烯速度调制势垒谐振隧道二极管。使用非平衡格林函数技术分析器件的电流-电压特性。发现阱/势垒区中的费米速度势垒通过抑制克莱因区和改善导致 NDR 的共振隧穿来操纵隧穿传输概率。对于速度障碍的特殊值，谐振状态彼此最大程度地对齐，从而以高峰谷比 (PVR) 增加峰值电流。NDR 窗口的宽度和位置由设备尺寸和潜在障碍的高度控制和设计。器件越小，NDR 特性就越好，例如更大的电流密度和最大 PVR。综上所述，结果表明，石墨烯势垒中足够大的费米速度对于制造新兴隧道器件来说是一个令人印象深刻的概念。