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Recognition of metallic and semiconductor single-wall carbon nanotubes using the photoelectric method
Sensors and Actuators A: Physical ( IF 4.6 ) Pub Date : 2021-09-15 , DOI: 10.1016/j.sna.2021.113108
A.V. Kozinetz 1 , S.V. Litvinenko 1, 2 , B.B. Sus 1 , A.I. Manilov 1 , A.S. Topchylo 1 , Alex Rozhin 3 , V.A. Skryshevsky 1, 2
Affiliation  

an innovative application of deep barrier silicon structures for sensory devices with photoelectrical transformation has been suggested. The principal possibility of the photovoltaic transducer implementation for identification of metallic and semiconductor single-wall carbon nanotubes covered with surfactant in water solution was analyzed in detail. The obtained results are qualitatively explained by local electrostatic influence on the parameters of recombination centers at the silicon surface. This influence can be associated with the dipole moment of molecules absorbed at the surface of the nanotube from surfactant sodium dodecylbenzene sulfonate (SDBS). Moreover, the spatial configuration of charged fragments near the defects at the silicon surface can occur. Another possible reason for carbon nanotubes identification is due to the different polarizability of metallic and semiconductor nanotubes. These results are explained in the frame of Stevenson-Keyes's theory. The reported effect can be further applied as the basis for the control and selection of carbon nanotubes with different conductivity types.



中文翻译:

用光电法识别金属和半导体单壁碳纳米管

已经提出了将深势垒硅结构用于具有光电转换的传感装置的创新应用。详细分析了光伏换能器用于识别水溶液中表面活性剂覆盖的金属和半导体单壁碳纳米管的主要可能性。获得的结果通过局部静电对硅表面复合中心参数的影响进行定性解释。这种影响可能与表面活性剂十二烷基苯磺酸钠 (SDBS) 在纳米管表面吸收的分子的偶极矩有关。此外,在硅表面缺陷附近可能会出现带电碎片的空间配置。识别碳纳米管的另一个可能原因是金属纳米管和半导体纳米管的极化率不同。这些结果在 Stevenson-Keyes 的理论框架中得到了解释。所报道的效应可以进一步作为控制和选择不同导电类型的碳纳米管的基础。

更新日期:2021-09-29
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