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Direct intercalation of MoS2 and WS2 thin films by vacuum filtration
Materials Horizons ( IF 13.3 ) Pub Date : 2021-09-15 , DOI: 10.1039/d1mh01193f
Ding-Yuan Kuo 1 , Brandi M Cossairt 1
Affiliation  

In the development of next-generation electronics and energy devices, intercalation compounds of transition metal dichalcogenides (TMDCs) are gaining attention for their unique properties that result from synergistic interactions between guest species and host materials. Nowadays, intercalation compounds of MoS2 and WS2 are commonly prepared by a two-step process: (1) exfoliation to form single-layer and/or few-layer nanosheets and (2) restacking the nanosheets with the guest species by vigorously mixing the exfoliated suspension with the solution of guest species. While a wide variety of intercalation compounds have been synthesized using this approach, the intercalation process is often time-consuming, and the product slurry limits material quality and impedes characterization and applications. Herein, we report a versatile method for preparing intercalated TMDCs in a thin-film morphology. Using this approach, we successfully prepared a range of existing intercalation compounds of MoS2 and WS2 (e.g., ferrocene and amine intercalated MoS2 and WS2). Additionally, by leveraging the versatility of this intercalation method, we intercalated phenazine and benzoquinone into MoS2 and WS2 for the first time.

中文翻译:

通过真空过滤直接嵌入 MoS2 和 WS2 薄膜

在下一代电子和能源设备的开发中,过渡金属二硫属元素化物 (TMDC) 的插层化合物因其独特的特性而受到关注,这些特性是由客体物质和主体材料之间的协同相互作用产生的。目前,MoS 2和 WS 2 的插层化合物通常通过两步法制备:(1)剥离以形成单层和/或几层纳米片;(2)通过将剥离的悬浮液与客体溶液剧烈混合,将纳米片与客体物质重新堆叠。虽然使用这种方法合成了各种各样的插层化合物,但插层过程通常很耗时,而且产品浆料限制了材料质量并阻碍了表征和应用。在此,我们报告了一种以薄膜形态制备插层 TMDC 的通用方法。使用这种方法,我们成功地制备了一系列现有的 MoS 2和 WS 2嵌入化合物(例如,二茂铁和胺嵌入的 MoS 2和 WS2)。此外,通过利用这种嵌入方法的多功能性,我们首次将吩嗪和苯醌嵌入 MoS 2和 WS 2中。
更新日期:2021-11-24
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