Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices.

中文翻译：

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滑石电介质上过渡金属二硫属化物的电学和光学性质

先进的范德华 (vdW) 异质结构器件依赖于高质量介电材料的结合，这些材料需要具有低缺陷密度以及原子级平滑和均匀。在这项工作中，我们探索了使用滑石电介质作为六方氮化硼 (hBN) 的潜在清洁替代基材，用于少层过渡金属二硫属化物 (TMDC) 晶体管和激子 TMDC 单层。我们发现滑石介电晶体管显示出很小的滞后，这与扫描速率无关，并且对于我们研究的介电厚度显示出可以忽略不计的漏电流。我们还展示了滑石上不同 TMDC 单层的窄光致发光线宽低至 10 meV，这突出表明滑石是未来范德华器件的有前途的材料。