Switching performance of a low-voltage switching device (LVSD) is determined by limiting current and stopping re-ignition. This is strongly influenced by how the arc moves inside the LVSD quenching chamber during the switching process. Improved switching performance is achieved when the arc quickly enters and stays inside the splitter plates of the LVSD, with the arc attached to the surface of the plates. This article studies arc motion around splitter plates in LVSDs and the correlation with arc voltage. Arc motion is investigated using a high-speed optical arc imaging system (AIS). It is observed that the arc fluctuates as it enters the splitter plates, with periods inside the plates followed by sudden re-strikes of the arc roots outside the plates. The AIS system allows the measurement of arc displacement and a correlation with the arc voltage. The results show two phases, with a narrow correlation while the arc in the chamber out of the splitter plates and a distributed correlation while in the splitter plates. Further, a new performance parameter the splitter time (ST) ratio is defined. The influence of the ST ratio on the chamber vent design is investigated. It is found that with wider and well-distributed vent apertures, the ST ratio is higher than with a closed vent, and arc motion on entry to the plates is improved.

中文翻译：

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低压开关装置中分流板附近电弧运动的实验研究

低压开关器件 (LVSD) 的开关性能取决于限制电流和停止重新点火。这受到切换过程中电弧在 LVSD 灭弧室内的移动方式的强烈影响。当电弧快速进入并停留在 LVSD 的分流板内部，并且电弧附着在分流板的表面上时，可以提高开关性能。本文研究了 LVSD 中分流板周围的电弧运动以及与电弧电压的相关性。使用高速光学弧成像系统 (AIS) 研究弧运动。可以观察到，电弧在进入分流板时会发生波动，在板内出现一段时间后，板外的弧根突然重新撞击。AIS 系统允许测量电弧位移以及与电弧电压的相关性。结果显示了两个阶段，当室中的电弧离开分流板时具有窄相关性，而在分流板中时具有分布式相关性。此外，定义了一个新的性能参数分离器时间 (ST) 比。研究了 ST 比对腔室通风口设计的影响。发现使用更宽且分布均匀的排气孔时，ST 比高于封闭式排气孔，并且改善了进入板时的电弧运动。