Large-area and high-quality graphene grown on metal by chemical vapor deposition (CVD) has great potential applications in electronics and photo electronics. After more than 10 years of development, great progress has been made in the growth of graphene, and the role of various factors in the growth of graphene has been gradually clear. In this review, the role of hydrogen and oxygen in the formation and elimination of carbon-based impurities and silicon oxide particles and in the formation, observation, and control of grain boundary, point defects, and wrinkles is introduced. The content focuses on the specific experimental methods, results, and mechanism. Finally, the challenges of hydrogen and oxygen in the study of graphene growth on metal are introduced. This review can increase the theoretical knowledge and experimental design ability related to hydrogen and oxygen in CVD graphene grown on metal.

通过化学气相沉积（CVD）在金属上生长的大面积高质量石墨烯在电子和光电子领域具有巨大的应用潜力。经过10多年的发展，石墨烯的生长取得了长足的进步，各种因素在石墨烯生长中的作用逐渐明朗。在这篇综述中，介绍了氢和氧在碳基杂质和氧化硅颗粒的形成和消除以及晶界、点缺陷和皱纹的形成、观察和控制中的作用。内容侧重于具体的实验方法、结果和机理。最后，介绍了氢和氧在金属上石墨烯生长研究中的挑战。