Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since the growth of vertical graphene is different on each base material and has specific deposition setting parameters, it is necessary to examine each base material separately. For this reason, a full factor design of experiment was performed with 2⁶ = 64 rounds, which contained additional 5 central points, i.e., a total of 69 rounds of individual experiments, which was to examine the effect of input factors Temperature, Pressure, Flow, CH₄, Plasma Power, and Annealing in H₂ on the growth of vertical graphene on aluminum alloy AlCu4Mg. The deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) technology. Mainly, the occurrence of graphene was analyzed, which was confirmed by Raman spectroscopy, as well as its thickness. The characterization was performed using electron and transmission microscopy, including an atomic force microscope. It was found that the growth of graphene occurred in 7 cases and its thickness is affected only by the interaction flow (sccm) × pretreatment H₂ (sccm).

中文翻译：

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PECVD技术在AlCu4Mg合金上垂直生长石墨烯

垂直石墨烯属于纳米材料，是一种非常有前景的工具，可以改善长期使用和证明材料的有用性能。由于垂直石墨烯的生长在每种基材上都不同，并且具有特定的沉积设置参数，因此需要分别检查每种基材。为此，进行了2 ⁶ = 64 轮的全因子实验设计，其中包含额外的5 个中心点，即总共69 轮单个实验，用于检验输入因子温度、压力、H _{2 中的}流动、CH ₄、等离子体功率和退火在铝合金 AlCu4Mg 上垂直生长石墨烯。使用等离子体增强化学气相沉积 (PECVD) 技术进行沉积。主要是分析石墨烯的存在，并通过拉曼光谱对其进行确认，以及其厚度。使用电子和透射显微镜进行表征，包括原子力显微镜。发现石墨烯的生长发生在 7 种情况下，其厚度仅受相互作用流 (sccm) × 预处理 H ₂ (sccm) 的影响。