In this study, magnetron sputtering is implemented to adjust the sputtering power from 156 to 306 W at room temperature, and thin film samples of indium tin oxide (ITO) on a flexible fluorphlogopite substrate are taken. With the increase in power, the resistivity of the film first decreases and then increases. The resistivity is at least 1.51 × 10^–3 Ω cm at 276 W, and the highest resistivity is 2.93 × 10^–2 Ω cm at 156 W. The average light transmittance of the film (400–800 nm) decreases with the increase in power within the range of 156–276 W, The highest average transmittance is 92.6% at 156 W. The quality factor of the film first rises and then decreases as the power increases, it is as high as 4.47 × 10^–3 Ω^–1sq at 276 W. All the AFMs show that the roughness of the sample does not significantly change with power. The SEM picture shows that as the power increases from 156 to 276 W, the grain size increases slightly. All samples are bent 1200 times around a steel cylinder, and the sheet resistance does not change more than 5%.

中文翻译：

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溅射功率对柔性氟金云母基板上 ITO 薄膜光学和电学性能的影响

在这项研究中，实施磁控溅射以在室温下将溅射功率从 156 W 调整到 306 W，并在柔性氟金云母基板上获取氧化铟锡 (ITO) 薄膜样品。随着功率的增加，薄膜的电阻率先减小后增大。电阻率在 276 W时至少为 1.51 × 10 ^–3 Ω cm，在 156 W 时最高电阻率为 2.93 × 10 ^–2 Ω cm。薄膜的平均透光率（400-800 nm）随着功率在156-276 W范围内，在156 W时最高平均透光率为92.6%。薄膜品质因数随着功率的增加先升高后降低，高达4.47×10 ^–3 Ω ^–1sq 为 276 W。所有 AFM 显示样品的粗糙度不会随功率发生显着变化。SEM 图片显示，随着功率从 156 W 增加到 276 W，晶粒尺寸略有增加。所有样品围绕钢筒弯曲 1200 次，薄层电阻变化不超过 5%。