In this paper, a new Radiation Hardened By Design (RHBD) 8T SRAM cell is proposed that can tolerate single-event upset (SEU) in a radiation environment. According to the simulation results for 130 nm silicon-on-insulator (SOI) technology, the critical charge of the proposed 8T cell increases by 82.9% compared to the conventional 6T SRAM cell and by 62.5% compared to the other RHBD SRAM cell, the Soft-error-Tolerant-10T (ST-10T) cell. Pulsed laser testing was used for SEU sensitivity evaluation. Further, the energy threshold of the proposed cell increases by 122.3% and 90.8%, respectively, compared to the conventional 6T cell and the ST-10T cell. Moreover, the proposed cell has a lower leakage current, higher read current, and larger read static noise margin (RSNM) compared to the other two cells. The total ionizing dose (TID) effects on the proposed 8T SRAM cell were also studied, and the results show that the proposed cell is insensitive to TID.

在本文中，提出了一种新的抗辐射设计 (RHBD) 8T SRAM 单元，它可以在辐射环境中耐受单事件翻转 (SEU)。根据 130 nm 绝缘体上硅 (SOI) 技术的仿真结果，所提出的 8T 单元的临界电荷与传统的 6T SRAM 单元相比增加了 82.9%，与其他 RHBD SRAM 单元相比增加了 62.5%，软容错 10T (ST-10T) 单元。脉冲激光测试用于 SEU 灵敏度评估。此外，与传统的 6T 电池和 ST-10T 电池相比，所提出的电池的能量阈值分别增加了 122.3% 和 90.8%。此外，与其他两个单元相比，所提出的单元具有更低的泄漏电流、更高的读取电流和更大的读取静态噪声容限 (RSNM)。