In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d₃₃) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d₃₃ was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

在本文中，我们首次报道了硅上 SiC 薄膜的压电传感特性，该薄膜由含硼液态聚碳硅烷 (PCS) 作为前驱体合成，通过改性化学气相沉积 (MoCVD) 技术沉积，然后进行结构表征的电影。对未掺杂和掺杂的 SiC 薄膜的结果进行了比较，以突出硼掺杂对 SiC 压电性能的影响。有趣的是，观察到硼掺杂的 SiC 薄膜的压电系数 (d ₃₃ ) 明显高于未掺杂的 SiC 薄膜 (16.21 pm/V) (21.33 pm/V)。d _{33 中}的增强分析考虑了由硼掺杂产生的薄膜内部的极化。结果表明，一种有前途的掺硼 SiC 薄膜材料可用于高温压电传感器。