Cu₂Zn(Sn_1-xGe_x)S₄ thin films (where x = 0, 0.25, 0.50, 0.75, and 1) were deposited by spin coating technique and annealed under 30 and 40 ccm H₂S:Ar (1:9) flows to understand the influence of Ge atom content ratio and H₂S flow rate during the annealing of thin films on morphological, structural and optical properties of Cu₂Zn(Sn_1-x Ge_x)S₄ thin films. It was seen that the Ge content has a strong influence on the structural and optical properties of the films. The crystal size of the films decreased sharply for Cu₂Zn(Sn_0.75Ge_0.25)S₄ thin film and started to increase slowly owing to the formation of high dislocation density and strain in the structures. The Raman spectra show the formation of kesterite thin films and blue Raman shift with Ge substitution to the content. The films obtained under 40 ccm H₂S:Ar (1:9) flows have weak secondary peaks associated with ZnS formation. The UV–Vis data showed the increase of optical bandgap from 1.52 to 2.05 eV with a rise in Ge ratio in the structures.

Cu ₂ Zn(Sn _1-x Ge _x )S ₄薄膜（其中 x = 0、0.25、0.50、0.75 和 1）通过旋涂技术沉积并在 30 和 40 ccm H ₂ S:Ar (1 :9) 流动以了解薄膜退火过程中 Ge 原子含量比和 H ₂ S 流量对 Cu ₂ Zn(Sn _1-x Ge _x )S ₄薄膜的形态、结构和光学性能的影响。可以看出，Ge含量对薄膜的结构和光学性能有很大影响。Cu ₂ Zn(Sn _0.75 Ge_0.25 )S ₄薄膜，由于在结构中形成高位错密度和应变，开始缓慢增加。拉曼光谱显示了锌黄铜矿薄膜的形成和蓝色拉曼位移，其中 Ge 取代了含量。在 40 ccm H ₂ S:Ar (1:9) 流下获得的薄膜具有与 ZnS 形成相关的弱次级峰。UV-Vis 数据显示，随着结构中 Ge 比率的增加，光学带隙从 1.52 eV 增加到 2.05 eV。