With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p–n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS_1−xSe_x (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS_0.5Se_0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS_1−xSe_x is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W⁻¹, high detectivity of 4.8 × 10¹² Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of ∼1.25 at 405 nm and ∼1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS_0.5Se_0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS_0.5Se_0.5/GaAs heterostructure for high-performance photodetection devices.

中文翻译：

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基于自驱动 SnS1−xSex 合金/GaAs 异质结构的独特偏振敏感光电探测器

随着半导体技术的飞速发展，自驱动器件已成为现代电子和光电元件不可或缺的一部分。在该领域，除了传统的肖特基和 p-n 结器件外，混合 2D/3D 半导体异质结构为光电应用提供了替代平台。在此，我们报告了 2D SnS _{1− x} Se _x ( x = 0, 0.5, 1) 纳米片的生长以及基于混合 SnS _0.5 Se _0.5 /GaAs 异质结构的自驱动光电探测器的构建。2D SnS _{1− x} Se _x的强各向异性理论和实验都证明了这一点。自驱动光电探测器对从可见光到近红外范围的入射光显示出高灵敏度。该器件在405 nm波长下实现了10.2 AW ^{-1 的}最大响应度、4.8×10 ¹² Jones 的高探测率和0.5/3.47 ms的快速响应速度。令人印象深刻的是，这种异质结构器件表现出各向异性的光电探测特性，二向色比在 405 nm 处为~1.25，在 635 nm 处为~1.45。这些显着特征可归因于 SnS _0.5 Se _0.5的高质量内置电位/GaAs 界面和合金工程，分别有效分离光生载流子和抑制深能级缺陷。这些结果意味着我们的 SnS _0.5 Se _0.5 /GaAs 异质结构在高性能光电检测器件方面具有巨大潜力。