Doping is required to modulate the electrical properties of semiconductors but introduces impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering is a particular issue in two-dimensional semiconductors because charged impurities are in close proximity to the atomically thin channel. Here we report the remote modulation doping of a two-dimensional transistor that consists of a band-modulated tungsten diselenide/hexagonal boron nitride/molybdenum disulfide heterostructure. The underlying molybdenum disulfide channel is remotely doped via controlled charge transfer from dopants on the tungsten diselenide surface. The modulation-doped device exhibits two-dimensional-confined charge transport and the suppression of impurity scattering, shown by increasing mobility with decreasing temperature. Our molybdenum disulfide modulation-doped field-effect transistors exhibit a room-temperature mobility of 60 cm² V^–1 s^–1; in comparison, transistors that have been directly doped exhibit a mobility of 35 cm² V^–1 s^–1.

掺杂是调节半导体的电气特性所必需的，但会引入导致库仑散射的杂质，从而阻碍电荷传输。这种散射在二维半导体中是一个特殊问题，因为带电杂质非常靠近原子级薄通道。在这里，我们报告了由带调制二硒化钨/六方氮化硼/二硫化钼异质结构组成的二维晶体管的远程调制掺杂。下方的二硫化钼通道通过从二硒化钨表面上的掺杂剂受控的电荷转移进行远程掺杂。调制掺杂器件表现出二维受限的电荷传输和杂质散射的抑制，表现为迁移率随温度降低而增加。²  V ^–1 秒^{– 1}；相比之下，直接掺杂的晶体管表现出 35 cm ²  V ^–1  s ^{– 1}的迁移率。