Through this paper, we discuss how Tunnel Field Effect Transistors can be utilized for the detection of biomaterials hence acting as a biosensor. The device proposed is a 3-D Doping less Nanotube Tunnel Field Effect Transistor (DL-NT-TFET) device with a wrap-around gate or a Gate all around to provide maximum control over the charge carriers as surface control increases. The source (p+) and drain (n+) are shaped by utilizing Charge Plasma Technique in which Hafnium metal with work 3.9ev is utilized at the drain side and Platinum metal with work function 5.93 eV is utilized at the source side. This technique is used for simplification in the fabrication as there is no requirement for Doping. For introducing Biomaterial, a cavity is introduced under the gate at the source side. Different dielectric values ranging from k = 1, 2.9, 3.57 ,5,8,12,16,20 is analysed to study the variation in parameters like I_D -V_GS characteristics, subthreshold slope, electric field, carrier concentration etc. as a part of the results. The objective of our work is to propose a device with the least difficulty in fabrication and improved characteristics like high Ion, low subthreshold slope, high Ion/I off ratio etc.

通过本文，我们讨论了隧道场效应晶体管如何用于检测生物材料，从而充当生物传感器。提出的器件是 3-D 掺杂较少的纳米管隧道场效应晶体管 (DL-NT-TFET) 器件，具有环绕栅极或四周的栅极，以在表面控制增加时提供对电荷载流子的最大控制。源极 (p+) 和漏极 (n+) 是利用电荷等离子体技术成形的，其中在漏极侧使用功函数为 3.9ev 的铪金属，在源极侧使用功函数为 5.93 eV 的铂金属。该技术用于简化制造，因为不需要掺杂。为了引入生物材料，在源极侧的栅极下方引入了一个空腔。不同的介电值范围从 k = 1, 2.9, 3.57 ,5,8,12,16,_D -V _GS特性、亚阈值斜率、电场、载流子浓度等作为结果的一部分。我们工作的目标是提出一种制造难度最小的器件，并具有改进的特性，如高离子、低亚阈值斜率、高离子/I off 比等。