Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall–bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov–de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor ν = 4, 6, and 8, are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.

中文翻译：

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n 型宽碲量子阱中的双层量子霍尔态

碲 (Te) 是一种窄带隙半导体，具有独特的手性晶体结构。通过在二维 (2D) Te 薄膜上使用原子层沉积 (ALD) 技术实现 n 型掺杂，可以研究 Te 导带中电子的拓扑性质。在这项工作中，我们制造并测量了双栅极 n 型 Te 霍尔棒器件，它可以作为由顶栅和背栅控制的两个独立或耦合的电子层运行。在顶部和底部电子层中都观察到了深刻的 Shubnikov-de Haas (SdH) 振荡。分析了填充因子 ν = 4、6 和 8 下两层、化合物和电荷可转移双层量子霍尔态之间的朗道能级杂化。我们的工作为在二维材料的耦合双层系统中研究外尔物理学打开了大门。