To develop wide bandgap materials for solar cells and other optoelectronic devices, undoped hydrogenated silicon oxide (SiO_x:H) thin films are prepared by conventional radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method. The variation of carbon dioxide dilution (Yc) on optoelectronic and structural properties are studied thoroughly by keeping silane and hydrogen gas flow fixed. Surface morphology of the SiO_x:H films have been studied by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Distinct silicon nanocrystallites of average diameter ∼ 3–6nm embedded uniformly in amorphous SiO_x network have been observed in high resolution Transmission Electron Microscopy (HRTEM). From Fourier Transform Infrared spectra (FTIR), it is observed that oxygen content (Co) increases initially with Yc and afterwards it decreases. Strong room temperature photoluminescence (PL) peak is obtained for the as-deposited films having lower oxygen content (Co). The origin of room temperature PL spectra and its correlation with Co can be explained by quantum confinement effect (QCE) theory.

中文翻译：

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等离子体沉积纳米晶氢化硅氧化物薄膜的光电和结构特性

为了开发用于太阳能电池和其他光电器件的宽带隙材料，未掺杂的氢化氧化硅（SiO_X:H) 薄膜是通过传统的射频等离子体增强化学气相沉积 (RF PECVD) 方法制备的。二氧化碳稀释度的变化（是C) 通过保持硅烷和氢气流量固定，彻底研究了光电和结构特性。SiO的表面形貌_X:H 薄膜已通过场发射扫描电子显微镜 (FESEM) 和原子力显微镜 (AFM) 进行了研究。平均直径不同的硅纳米微晶～3–6nm均匀嵌入无定形SiO_X在高分辨率透射电子显微镜（HRTEM）中观察到了网络。从傅里叶变换红外光谱 (FTIR) 可以看出，氧含量 (C○) 最初随着是C然后它减少。对于具有较低氧含量的沉积膜获得强室温光致发光（PL）峰（C○）。室温 PL 光谱的起源及其与C○可以用量子限制效应（QCE）理论来解释。