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Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2021-09-10 , DOI: 10.1021/acsaelm.1c00590
Maximilian Lederer 1 , Pratik Bagul 1 , David Lehninger 1 , Konstantin Mertens 1 , André Reck 1 , Ricardo Olivo 1 , Thomas Kämpfe 1 , Konrad Seidel 1 , Lukas M. Eng 2
Affiliation  

The ferroelectric properties of hafnium oxide films are strongly influenced by the crystallization process due to the interaction of thermodynamics, kinetics, and mechanical stress. In this work, the influence of annealing temperature on the crystallographic properties and microstructure of Si-doped hafnium oxide thin films as well as their ferroelectric properties are investigated by X-ray diffraction, transmission Kikuchi diffraction, and electrical characterization. The findings reveal the emergence of a [100] and [110] out-of-plane texture for metal–ferroelectric–metal (MFM) and metal–ferroelectric–insulator–semiconductor (MFIS) capacitor structures with increasing annealing temperature, respectively. In combination with observed stress relaxation at higher temperatures and the evolution of the wake-up behavior, insights into the crystallization process and the influence of the interplay of microstructure and stress on the ferroelectric properties of hafnium oxide thin films are given.

中文翻译:

退火温度对掺硅铁电氧化铪结构和电学性能的影响

由于热力学、动力学和机械应力的相互作用,氧化铪薄膜的铁电性能受到结晶过程的强烈影响。在这项工作中,通过 X 射线衍射、透射菊池衍射和电学表征研究了退火温度对 Si 掺杂氧化铪薄膜的晶体学性能和微观结构及其铁电性能的影响。研究结果表明,随着退火温度的升高,金属-铁电-金属(MFM)和金属-铁电-绝缘体-半导体(MFIS)电容器结构分别出现了[100]和[110]面外纹理。结合在较高温度下观察到的应力松弛和唤醒行为的演变,
更新日期:2021-09-28
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