In this paper, a piezoresistive pressure sensor based on silicon on insulator (SOI) was presented, which was composed of an SOI layer with sensing elements and a glass cap for a hermetic package. Different from its conventional counterparts, the position and thickness of the four piezoresistors was optimized based on numerical simulation, which suggests that two piezoresistors at the center while the other two at the edge of the pressure-sensitive diaphragm and a thickness of 2 μm can produce the maximum sensitivity and the minimum nonlinearity. Due to the use of silicon rather than metal for electrical connections, the piezoresistive pressure sensor was fabricated in a highly simplified process. From the experimental results, the fabricated piezoresistive pressure sensor demonstrated a high sensitivity of 37.79 mV·V⁻¹·MPa⁻¹, a high full-scale (FS) output of 472.33 mV, a low hysteresis of 0.09% FS, a good repeatability of 0.03% FS and a good accuracy of 0.06% FS at 20 °C. A temperature coefficient of sensitivity of 0.44 mV·MPa⁻¹·°C⁻¹ and a low zero drift were also shown at different temperatures. The piezoresistive pressure sensor developed in this study may function as an enabling tool in pressure measurements.

中文翻译：

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一种优化压敏电阻位置和厚度的压阻式压力传感器

在本文中，提出了一种基于绝缘体上硅 (SOI) 的压阻式压力传感器，它由带有传感元件的 SOI 层和用于密封封装的玻璃盖组成。与传统的同类产品不同，四个压敏电阻的位置和厚度基于数值模拟进行了优化，这表明两个压敏电阻位于中心，另外两个在压敏膜片的边缘，厚度为 2 μm。最大灵敏度和最小非线性。由于使用硅而不是金属进行电气连接，压阻式压力传感器的制造过程非常简单。从实验结果来看，所制造的压阻式压力传感器表现出37.79 mV·V ^-1的高灵敏度·MPa ^-1，472.33 mV的高满量程（FS）输出，0.09% FS的低滞后，0.03% FS的良好重复性和20°C下0.06% FS的良好精度。0.44 mV·MPa ^-1 ·°C ^-1的灵敏度温度系数和低零漂移也在不同温度下显示。本研究中开发的压阻式压力传感器可作为压力测量的使能工具。