Nano-mold is an essential tool for nano-imprinting. However, large-area nano-mold fabrication relies on expensive equipment or complicated processing. Silicon nano-molds were achieved by proximity ultraviolet lithography and reactive ion etching (RIE). By optimizing the parameters in the processes of exposure, development, and RIE, silicon nano-mold with nano-scale ridges were fabricated with high-precision. The achieved minimum width of nano-ridges was 263 nm. This method is capable of fabricating silicon nano-mold covering four-inch wafer, which is simple, efficient and free from costly equipment.

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一种低成本、高效率的近紫外曝光四英寸硅纳米模具方法

纳米模具是纳米压印必不可少的工具。然而，大面积纳米模具制造依赖于昂贵的设备或复杂的工艺。硅纳米模具是通过近紫外光刻和反应离子蚀刻 (RIE) 实现的。通过优化曝光、显影和RIE过程中的参数，高精度地制造出具有纳米级脊的硅纳米模具。实现的纳米脊的最小宽度为 263 nm。该方法能够制作覆盖四英寸晶圆的硅纳米模具，简单、高效、无需昂贵的设备。