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Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation
The Journal of Physical Chemistry Letters ( IF 5.7 ) Pub Date : 2021-09-10 , DOI: 10.1021/acs.jpclett.1c02815
Lu Wang 1 , Hongyu Zhu 1 , Dianzhong Wen 1
Affiliation  

Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 104 s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>105) and a smaller Vreset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.

中文翻译:

具有产生库仑阻塞效应的金纳米粒子的生物电阻随机存取存储器可实现多级数据存储和突触模拟

金纳米粒子(Au NPs)具有良好的生物相容性和特殊的量子效应。在这封信中,我们将 Au NPs 嵌入蚕血淋巴 (SH) 以提高器件的性能,并制造了 Al/SH:Au NPs/氧化铟锡 (ITO)/玻璃电阻随机存取存储器。该器件表现出双极开关行为,保留时间为 10 4 s。与没有 Au NPs 的 Al/SH/ITO 器件相比,该器件具有更高的 ON/OFF 电流比 (>10 5 ) 和更小的V reset. 器件性能的提高归因于 Au NPs 作为器件中的电子俘获中心;电子被俘获后发生库仑阻塞,从而增加器件在高阻状态下的电阻。使用优化的设备可以实现多级数据存储,还可以模拟增强和抑制等突触特性。该设备有望在未来应用于高密度、低成本、可降解、生物相容的存储设备和神经形态计算。
更新日期:2021-09-23
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