Achieving tunable optoelectronic properties and clarifying interlayer interactions are key challenges in the development of 2D heterostructures. Herein, we report the feasible modulation of the optoelectronic properties of monolayer MoS₂ (1L-MoS₂) on three different graphene monolayers with varying ability in extracting electrons. Monolayer oxygen-functionalized graphene (1L-oxo-G, a high amount of oxygen of 60%) with a work function (WF) of 5.67 eV and its lowly oxidized reduction product, namely reduced-oxo-G (1L-r-oxo-G, a low amount of oxygen of 0.1%), with a WF of 5.85 eV serving as hole injection layers significantly enhance the photoluminescence (PL) intensity of MoS₂, whereas pristine monolayer graphene (1L-G) with a work function (WF) of 5.02 eV results in PL quenching of MoS₂. The enhancement in the PL intensity is due to increase of neutral exciton recombination. Furthermore, 1L-r-oxo-G/MoS₂ exhibited a higher increase (5-fold) in PL than 1L-oxo-G/MoS₂ (3-fold). Our research can help modulate the carrier concentration and electronic type of 1L-MoS₂ and has promising applications in optoelectronic devices.

中文翻译：

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通过将单层MoS2堆叠到具有不同电子转移能力的单层石墨烯上组装的范德华异质结构中的层间电子调制

实现可调光电特性和阐明层间相互作用是二维异质结构发展的关键挑战。在此，我们报告了单层 MoS ₂ (1L-MoS ₂ ) 在具有不同提取电子能力的三种不同石墨烯单层上的光电特性的可行调制。功函数 (WF) 为 5.67 eV 的单层氧功能化石墨烯（1L-oxo-G，含氧量高 60%）及其低氧化还原产物，即reduced-oxo-G (1L-r-oxo -G，0.1% 的少量氧），WF 为 5.85 eV 作为空穴注入层，显着增强了 MoS ₂的光致发光（PL）强度，而具有 5.02 eV 功函数 (WF) 的原始单层石墨烯 (1L-G) 导致 MoS _{2 的}PL 猝灭。PL 强度的增强是由于中性激子复合的增加。此外，1L-r-oxo-G/MoS ₂表现出比1L-oxo-G/MoS ₂（3倍）更高的PL增加（5倍）。我们的研究有助于调节 1L-MoS ₂的载流子浓度和电子类型，在光电器件中具有广阔的应用前景。