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Compact and broadband mode demultiplexer using a subwavelength grating engineered MMI coupler
Journal of the Optical Society of America B ( IF 1.9 ) Pub Date : 2021-09-10 , DOI: 10.1364/josab.436158
Jinbiao Xiao , Liang Zhang

A compact and broadband mode demultiplexer (DEMUX) using a subwavelength grating (SWG) engineered multimode interference (MMI) coupler is proposed and analyzed in detail. To effectively separate the input ${{\rm TE}_0}$ and ${{\rm TE}_1}$ modes, the input port is formed by cascading two tapers, connected by a silicon wire, in a single SWG MMI coupler. Moreover, by partially tailoring the grating duty cycle of the SWGs, an extra phase shifter is directly integrated in the MMI coupler, parallel to the input port for adjusting the phase in mode conversion. The input ${{\rm TE}_0}$ mode can pass through the first taper and the silicon wire while being cut off and evolve into SWGs in the second taper, so that it is hardly affected by the extra phase shifter and directly mapped into the output port via MMI. On the contrary, the input ${{\rm TE}_1}$ mode is cut off in the first taper and evolves through the sidewall of the first taper into two ${{\rm TE}_0}$-like components in the SWG region. Then an extra $\pi /{2}$ phase shift between them is generated by the phase shifter. Finally, they are combined into the output ${{\rm TE}_0}$ mode via MMI. By carefully choosing the structural parameters, the proposed ${{\rm TE}_0}/{{\rm TE}_1}$ mode DEMUX shows a broad bandwidth of 350 nm from 1520 to 1870 nm for insertion loss ${\lt}{1.0}\;{\rm dB}$ and cross talk ${\lt}\,{-} {10}\;{\rm dB}$ and achieves a low insertion loss of 0.37 dB/0.40 dB and cross talk of ${-}{18.50}\;{\rm dB/ {-} 17.00}\;{\rm dB}$ for ${{\rm TE}_0}/{{\rm TE}_1}$ input at 1550 nm, within a short device length of only 18.6 µm. In addition, the device also shows a good fabrication tolerance to the deviations of structure parameters.

中文翻译:

使用亚波长光栅设计的 MMI 耦合器的紧凑型宽带模式解复用器

提出并详细分析了使用亚波长光栅 (SWG) 工程多模干涉 (MMI) 耦合器的紧凑型宽带模式解复用器 (DEMUX)。为了有效地分离输入${{\rm TE}_0}$${{\rm TE}_1}$模式,输入端口是通过在单个 SWG MMI 耦合器中级联由硅线连接的两个锥形形成的. 此外,通过部分调整 SWG 的光栅占空比,额外的移相器直接集成在 MMI 耦合器中,与输入端口平行,用于调整模式转换中的相位。输入${{\rm TE}_0}$mode可以通过第一个锥体和硅线,同时被切断,在第二个锥体中演变成SWG,因此几乎不受额外移相器的影响,直接通过MMI映射到输出端口。相反,输入${{\rm TE}_1}$模式在第一个锥体中被切断,并通过第一个锥体的侧壁演变成两个类似 ${{\rm TE}_0}$的元件在SWG 区域。然后移相器在它们之间产生额外的$\pi /{2}$相移。最后,它们通过 MMI组合成输出${{\rm TE}_0}$模式。通过仔细选择结构参数,提出的${{\rm TE}_0}/{{\rm TE}_1}$对于插入损耗${\lt}{1.0}\;{\rm dB}$和串扰${\lt}\,{-} {10}\ ;{\rm dB}$并实现了 0.37 dB/0.40 dB 的低插入损耗和${-}{18.50}\;{\rm dB/ {-} 17.00}\;{\rm dB}$对于${{\rm TE}_0}/{{\rm TE}_1}$输入在 1550 nm,在仅 18.6 µm 的短器件长度内。此外,该器件还对结构参数的偏差表现出良好的制造公差。
更新日期:2021-10-02
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