Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N₂/H₂ plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior with a barrier height of 0.87 ± 0.01 eV and an ideality factor of 1.02 ± 0.01 after annealing at 600 °C in N₂. These characteristics surpass those of pure metal nitride Schottky diodes, possibly due to work function engineering due to the incorporation of C and use of a remote plasma to avoid process-induced defects. According to x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, the film composition is approximately MoC_0.3N_0.7. Grazing incidence x-ray diffraction and plan-view transmission electron microscopy selected area electron diffraction are consistent with a rock salt structure with a lattice parameter of 0.42 nm.

中文翻译：

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通过等离子体原子层沉积沉积的碳氮化钼作为与氮化镓的肖特基接触

研究了通过等离子体增强原子层沉积制备的碳氮化钼膜用作与n型氮化镓的肖特基接触。使用双（叔丁基亚氨基）双（二甲氨基）钼和远程等离子体 N ₂ /H ₂等离子体沉积，用 Ti/Au 覆盖的二极管显示出优异的整流行为，势垒高度为 0.87 ± 0.01 eV，理想因子为 1.02 ± 0.01在 N ₂中 600 °C 退火后. 这些特性超过了纯金属氮化物肖特基二极管的特性，这可能是由于掺入 C 和使用远程等离子体以避免工艺引起的缺陷导致的功函数工程。根据X射线光电子能谱和能量色散X射线光谱，膜组成约为MoC _0.3 N _0.7。掠入射 X 射线衍射和平面图透射电子显微镜选区电子衍射与晶格参数为 0.42 nm 的岩盐结构一致。