Phenomenology similar to the non-reciprocal charge transport violating Onsager's reciprocity relations can develop in directionally inhomogeneous conducting films with non-uniform Hall coefficient along the current trajectory. The effect is demonstrated in ferromagnetic CoPd films and analyzed in comparison with the unidirectional magnetoresistance phenomena. We suggest to use an engineered inhomogeneity for spintronics applications and present the concept of mixed symmetry Hall devices in which transverse to current Hall signal is measured in a longitudinal contacts arrangement. Magnetization reversal and memory detection are demonstrated in the three-terminal and the partitioned normal metal–ferromagnet (NM-FM) device designs. Multi-bit memory is realized in the partitioned FM-NM-FM structure. The relative amplitude of the antisymmetric signal in the engineered ferromagnetic devices is few percent, which is 10–10³ times higher than in their unidirectional magnetoresistance analogues.

中文翻译：

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非互易磁阻、方向不均匀性和混合对称霍尔器件

与违反 Onsager 互易关系的非互易电荷传输类似的现象学可以在沿电流轨迹具有非均匀霍尔系数的定向不均匀导电薄膜中发展。该效应在铁磁 CoPd 薄膜中得到证明，并与单向磁阻现象进行比较分析。我们建议对自旋电子学应用使用工程不均匀性，并提出混合对称霍尔器件的概念，其中在纵向触点排列中测量横向电流霍尔信号。在三端和分区的正常金属 - 铁磁（NM-FM）器件设计中展示了磁化反转和记忆检测。多位存储器是在分区的 FM-NM-FM 结构中实现的。比单向磁阻类似物高³倍。