Here, we study the temperature-dependent transport properties of OFETs with the prototypical OSC 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) co-processed with polystyrene (PS) as the active layer. The active layer is deposited directly on SiO₂ using the bar-assisted meniscus shearing (BAMS) method. The co-processing with PS favors a consequential decrease in interfacial trap densities as previously reported. Furthermore, we demonstrate how this processing method leads to devices exhibiting activation energies well below the current state of the art for TIPS-pentacene on SiO₂ or other dielectrics. Altogether, our study reports on TIPS-pentacene thin films exhibiting an activation energy (E_a) as low as 15 meV when the active material is blended with PS and processed via BAMS. Such an unprecedentedly low value originates not only from a decrease in the interfacial trap densities but also from trapping energies much shallower than previously reported elsewhere for the same material. This allows us to clarify the previously reported notion that significant passivation of interfacial traps occurs following the separation of PS from TIPS-pentacene into an individual layer at the interface with the insulator and to confirm that the enhanced transport originates from a synergistic effect wherein both trapping density and depth are reduced.

中文翻译：

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通过棒辅助弯液面剪切制造的低活化能场效应晶体管

在这里，我们研究了 OFET 的温度相关传输特性，其中原型 OSC 6,13-​​双（三异丙基甲硅烷基乙炔基）并五苯（TIPS-并五苯）与聚苯乙烯（PS）共同处理作为活性层。使用棒状辅助弯液面剪切 (BAMS) 方法将活性层直接沉积在 SiO ₂上。如前所述，与 PS 的协同处理有利于界面陷阱密度的相应降低。此外，我们展示了这种处理方法如何导致器件的活化能远低于 SiO ₂或其他电介质上的 TIPS-并五苯的当前技术水平。总之，我们的研究报告了 TIPS-并五苯薄膜表现出的活化能（E _a) 当活性材料与 PS 混合并通过 BAMS 处理时，低至 15 meV。如此空前的低值不仅源于界面陷阱密度的降低，还源于陷阱能量比以前在其他地方报道的相同材料浅得多。这使我们能够澄清先前报道的界面陷阱的显着钝化发生在 PS 从 TIPS-并五苯中分离成绝缘体界面处的单个层后发生的显着钝化，并确认增强的输运源于协同效应，其中两个陷阱密度和深度减少。