Interface trap density (D_it) inside the conduction band of (111)-oriented InAs-on-insulator (InAs-OI) n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) was experimentally evaluated by developing a method through a combination of a Hall measurement and quasi-static split C–V (Hall-QSCV). The surface potential and D_it of the InAs-OI nMOSFET were self-consistently calculated by numerically solving the Schrödinger–Poisson equation. The energy distributions of D_it were found to be almost independent of the ultra-thin-body channel thickness and the quantization energy, indicating the validity of the proposed Hall-QSCV evaluation. The energy position of the D_it minimum is in good agreement with the theoretically predicted position of the charge neutrality level, which locates deeply inside the conduction band of InAs. The experimental maximum surface electron density N_smax at the InAs MOS interface, limited by Fermi level pinning, is 1.2 × 10¹³ cm⁻², which is 2–3 times higher than N_smax at the In_0.53Ga_0.47As MOS interfaces, owing to the lower D_it inside the InAs conduction band.

中文翻译：

---

通过自洽霍尔-QSCV 方法评估 InAs 绝缘体上 nMOSFET 导带内的界面陷阱

通过开发一种方法，对 (111) 取向绝缘体上 InAs (InAs-OI) n 沟道金属氧化物半导体场效应晶体管 (nMOSFET) 导带内的界面陷阱密度 ( D _it ) 进行了实验评估通过霍尔测量和准静态分离C – V (Hall-QSCV) 的组合。InAs-OI nMOSFET的表面电位和D _it是通过数值求解薛定谔-泊松方程自洽计算的。D _it的能量分布发现几乎与超薄体通道厚度和量化能量无关，表明所提出的霍尔-QSCV 评估的有效性。D _it最小值的能量位置与电荷中性能级的理论预测位置非常一致，电荷中性能级位于 InAs 导带深处。InAs MOS 界面处的实验最大表面电子密度N _smax受费米能级钉扎限制，为 1.2 × 10 ¹³  cm ^-2，比In _0.53 Ga _0.47 As MOS 界面处的N _smax高 2-3 倍，这是由于到下D_吧 InAs 导带内。