An oxygen-based ionic synaptic transistor (O-IST) is a promising synaptic element for neuromorphic computing. In this study, we demonstrated that the density of the electrolyte plays a key role in achieving excellent synaptic characteristics in an O-IST. In a Pr_0.7Ca_0.3MnO₃-based O-IST, we precisely controlled the density of the HfO_x electrolyte and found that a low-density electrolyte could improve the ion mobility. Owing to the improved ion mobility and controlled ion migration, we demonstrated that excellent synaptic characteristics, such as a wide dynamic range, linear weight update, low operating voltage operations, and stable cyclic operation, were achieved. Finally, we confirmed an improved pattern recognition accuracy using an O-IST with an HfO_x electrolyte of optimal density.

中文翻译：

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电解质密度对氧基离子突触晶体管突触特性的影响

基于氧的离子突触晶体管 (O-IST) 是用于神经形态计算的有前途的突触元件。在这项研究中，我们证明了电解质的密度在 O-IST 中实现优异的突触特性方面起着关键作用。在基于 Pr _0.7 Ca _0.3 MnO ₃的 O-IST 中，我们精确控制了 HfO _x的密度电解质，发现低密度电解质可以提高离子迁移率。由于改进的离子迁移率和受控的离子迁移，我们证明了优异的突触特性，例如宽动态范围、线性权重更新、低工作电压操作和稳定循环操作。最后，我们使用具有最佳密度的 HfO _x电解质的 O-IST 确认了模式识别精度的提高。