Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-09 , DOI: 10.1007/s10854-021-06946-8 Ganesh Shridhar Hegde 1 , A. N. Prabhu 1 , M. K. Chattopadhyay 2, 3
In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R\(\overline{3 }\)m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.
中文翻译:
提高 Sn 和 Se 共掺杂熔融生长 Bi2Te3 单晶的电导率和功率因数
在目前的工作中,锡和硒共掺杂的单晶碲化铋的生长和热电表征已在 10-400 K 的温度范围内进行。晶体显示六方晶体结构,R \(\overline{3 }\ ) m空间群。通过高分辨率 X 射线衍射研究分析了生长方向、单晶质量、位错密度和掺杂剂对晶体内平面结构的影响。X 射线的能量色散分析证实了元素组成,场发射扫描电子显微镜显示晶体表面均匀生长,微沉淀物。分别在原始和掺杂样品中观察到准退化和非退化电阻率。温度相关的塞贝克系数测量证实了原始样品和掺杂样品的n型半导体性质。(Bi 0.96 Sn 0.04 ) 2 Te 的温度相关功率因数2.7 Se 0.3与原始Bi 2 Te 3相比,增加了1.1倍,电阻率降低了3.3倍。