Amorphous, partially crystalline and polycrystalline indium sulphide (In₂S₃) obtained on the heat treatment of wet-chemically synthesized In₂S₃ powders, at 373, 523 and 673 K temperatures respectively in argon atmosphere have been examined by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The binding energies of In(3d) and S(2p) electrons decrease on the transformation of the compound from its amorphous to polycrystalline (β-In₂S₃) state. The co-existence of amorphous and crystalline phases in the partially crystalline material is conclusively demonstrated by the occurrence of as many peaks in the In(3d) electron spectrum. The XPS measurements also indicate the prevalence of β-In₂S₃ in subtle amounts in the amorphous In₂S₃ powder and a certain content of amorphous In₂S₃ in the material heat treated at 673 K. The higher binding energies of In 3d_5/2 electrons (446 eV) and S 2p_3/2 electrons (163.3 eV) in amorphous In₂S₃ can be attributed to the lack of extra-atomic relaxation. The relative shifts of the binding energies suggest that the bonding is more ionic in the crystalline phase. The polycrystalline material has Raman spectrum typical of β-In₂S₃ indicating a crystal ordering initially with the formation of InS₄ tetrahedra and subsequently with, InS₆ octahedra as the temperature of the treatment is increased to 673 K. The Raman spectrum, too, points to the prevalence of a certain amorphicity in the compound.

用 X 射线光电子研究了在 373、523 和 673 K 温度下分别在 373、523 和 673 K 的温度下对湿化学合成的 In ₂ S ₃粉末进行热处理获得的无定形、部分结晶和多晶硫化铟（In ₂ S ₃）光谱（XPS）和拉曼光谱。In(3d) 和 S(2p) 电子的结合能随着化合物从非晶态转变为多晶态 (β-In ₂ S ₃） 状态。部分结晶材料中非晶相和结晶相的共存最终通过 In(3d) 电子光谱中出现的许多峰来证明。该XPS测量也表明的患病率β-在₂小号₃在无定形在细微量在₂ š ₃粉末和无定形一定含量在₂ š ₃中在673 K的热处理的材料在较高的结合能无定形 In ₂ S _{3 中的}3d _5/2电子 (446 eV) 和 S 2p _3/2电子 (163.3 eV)可归因于缺乏超原子弛豫。结合能的相对变化表明，结晶相中的结合更具离子性。多晶材料具有典型的 β-In ₂ S ₃拉曼光谱，表明随着处理温度升高至 673 K，晶体有序排列，最初形成 InS ₄四面体，随后形成InS ₆八面体。拉曼光谱也是如此, 表明化合物中普遍存在一定的非晶性。