A novel recycling system for indium in indium tin oxide (ITO), which comprises the dissolution of indium oxide (In₂O₃), chlorination, chelation, and steaming treatment, was established. Indium trichloride (InCl₃) was quantitatively synthesized by the reaction of In₂O₃ with hydrochloric acid (HCl) and furnished tris(ethyl acetoacetato)indium (In(etac)₃) in a high yield by a subsequent reaction with ethyl acetoacetate (Hetac). In(etac)₃ was mixed with bis(acetylacetonato)tin dichloride (Sn(acac)₂Cl₂) and spin coated on a glass plate, followed by steaming and heating to obtain ITO films containing 10 wt% tin oxide. In₂O₃ was crystallized in c-, rh-, and o-In₂O₃. This film showed a resistivity of 9.7 Ωcm and a transparency of 86%.

建立了氧化铟锡(In ₂ O ₃ )溶解、氯化、螯合、汽蒸处理的铟锡氧化物(ITO)回收新体系。通过 In ₂ O ₃与盐酸 (HCl)反应定量合成三氯化铟 (InCl ₃ )，并通过随后与乙酰乙酸乙酯反应以高收率提供三(乙酰乙酸乙酯)铟 (In(etac) ₃ ) (赫塔克）。In(etac) ₃与双（乙酰丙酮）二氯化锡（Sn(acac) ₂ Cl ₂)并旋涂在玻璃板上，然后蒸和加热得到含有10wt%氧化锡的ITO薄膜。In ₂ O ₃在c-、rh-和o-In ₂ O _{3 中}结晶。该膜显示出9.7Ωcm的电阻率和86%的透明度。