Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS₂, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 °C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS₂ along the ⟨002⟩ crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for other 2D materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano- and optoelectronic devices.

中文翻译：

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准二维 MoS2 中的非晶到晶体转变：对 2D 电子设备的影响

二维 (2D) 过渡金属二硫属化物 (TMDC) 已显示出非常强大的应用潜力。为了实现这一目标，大规模合成化学计量的二维 TMDC 至关重要。在这里，我们考虑一个典型的TMDC代表的MoS ₂，并呈现为良好有序的晶体膜的制造中的方法通过在800℃下，将其在长距离的条件和调查退火薄的无定形层的结晶短线订单。层状MoS _{2 的}强优先晶体生长沿着 ⟨002⟩ 晶面从沉积的 3D 非晶相开始，与使用 Vienna Ab initio Simulation Package 的分子动力学模拟公开的结晶过程的机制一起讨论。我们相信所获得的结果可以推广到其他二维材料。所提出的方法展示了一种简单而有效的方法来制造用于纳米和光电器件的薄 2D TMDC。