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Effects of high-temperature annealing on the performance of copper oxide photodetectors
Applied Physics A ( IF 2.7 ) Pub Date : 2021-09-09 , DOI: 10.1007/s00339-021-04906-x
Amir Shariffar 1 , Haider Salman 1 , Tanveer A. Siddique 1 , M. Omar Manasreh 1
Affiliation  

Copper oxide thin films are grown using copper nanofilms oxidized at high annealing temperatures. The thin film crystallinity and surface morphology are probed using the X-ray diffractometer and scanning electron microscopy, indicating that the crystalline quality of the copper oxide thin films is improved by increasing the annealing temperature. Under ultraviolet–visible light illumination, the fabricated device with thin films annealed at 900 °C and the corresponding bandgap of 2.8 eV demonstrates the high responsivity of 15.1 A/W and maximum detectivity of 4.52 × 1012 cmHz1/2/W. The photosensitivity of thin films annealed at 900 °C is more than ten times higher than that of thin films annealed at 800 °C. The fabricated device works as a visible–ultraviolet photodetector and maintains uniform and stable performance for a tested period of eight weeks.



中文翻译:

高温退火对氧化铜光电探测器性能的影响

使用在高退火温度下氧化的铜纳米膜来生长氧化铜薄膜。使用X射线衍射仪和扫描电子显微镜探测薄膜结晶度和表面形貌,表明通过提高退火温度改善了氧化铜薄膜的结晶质量。在紫外可见光照射下,在 900 °C 下退火且相应的带隙为 2.8 eV 的制造器件展示了 15.1 A/W 的高响应度和 4.52 × 10 12 cmHz 1/2 的最大探测率/W。900℃退火薄膜的光敏度比800℃退火薄膜高十倍以上。制造的设备用作可见光-紫外线光电探测器,并在八周的测试期内保持均匀和稳定的性能。

更新日期:2021-09-09
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