In this work, the growth and stability towards O₂ exposure of two dimensional (2D) TaS₂ on a Cu(111) substrate is investigated. Large area (∼1 cm²) crystalline 2D-TaS₂ films with a metallic character are prepared on a single crystal Cu(111) substrate via a multistep approach based on physical vapor deposition. Analytical techniques such as Auger electron spectroscopy, low energy electron diffraction, and photoemission spectroscopy are used to characterize the composition, crystallinity, and electronic structure of the surface. At coverages below one monolayer equivalent (ML), misoriented TaS₂ domains are formed, which are rotated up to relative to the Cu(111) crystallographic directions. The TaS₂ domains misorientation decreases as the film thickness approaches 1 ML, at which the crystallographic directions of TaS₂ and Cu(111) are aligned. The TaS₂ film is found to grow epitaxially on Cu(111). As revealed by low energy electron diffraction in conjunction with an atomic model simulation, the (3נ3) unit cells of TaS₂ match the (4נ4) supercell of Cu(111). Furthermore, the exposure of TaS₂ to O₂, does not lead to the formation of a robust tantalum oxide film, only minor amounts of stable oxides being detected on the surface. Instead, the exposure of TaS₂ films to O₂ leads predominantly to a reduction of the film thickness, evidenced by a decrease in the content of both Ta and S atoms of the film. This is attributed to the formation of oxide species that are unstable and mainly desorb from the surface below room temperature. Temperature programmed desorption spectroscopy confirms the formation of SO₂, which desorbs from the surface between 100 and 500 K. These results provide new insights into the oxidative degradation of 2D-TaS₂ on Cu(111).

在这项工作中，研究了二维 (2D) TaS ₂在 Cu(111) 衬底上对 O ₂暴露的生长和稳定性。通过基于物理气相沉积的多步方法，在单晶 Cu(111) 衬底上制备了具有金属特性的大面积 (~1 cm ² ) 结晶 2D-TaS ₂薄膜。俄歇电子能谱、低能电子衍射和光电子能谱等分析技术用于表征表面的组成、结晶度和电子结构。在低于一个单层当量 (ML) 的覆盖率下，形成错误取向的 TaS ₂域，其旋转至相对于 Cu(111) 结晶方向。当薄膜厚度接近 1 ML 时，TaS ₂畴取向差减小，此时 TaS ₂和 Cu(111)的结晶方向对齐。发现TaS ₂膜在Cu(111)上外延生长。正如结合原子模型模拟的低能电子衍射所揭示的那样，TaS ₂的 (3נ3) 晶胞与 Cu(111) 的 (4נ4) 超晶胞相匹配。此外，TaS ₂暴露于O ₂不会导致形成坚固的氧化钽膜，仅在表面检测到少量稳定氧化物。相反，TaS ₂薄膜暴露于 O ₂主要导致薄膜厚度的减小，这可以通过薄膜中 Ta 和 S 原子含量的减少来证明。这归因于不稳定且主要从低于室温的表面解吸的氧化物物质的形成。程序升温解吸光谱证实了 SO ₂的形成，其在 100 到500 K之间从表面解吸。这些结果提供了对 Cu(111) 上2D-TaS ₂氧化降解的新见解。