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Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers
Journal of Applied Physics ( IF 3.2 ) Pub Date : 2021-09-01 , DOI: 10.1063/5.0057627
Takuto Izawa 1 , Hirono Okano 1 , Shintaro Morita 1 , Noboru Ohtani 1
Affiliation  

The influence of the facet trace region in the 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations (BPDs) in a 4H-SiC homoepitaxial layer was investigated using x-ray topography, high-resolution x-ray diffraction, and micro-Raman scattering spectroscopy. The facet trace region in the substrate, which has a higher nitrogen doping concentration than the other regions in the substrate, is of great interest since it could influence the glide and propagation behaviors of BPDs during 4H-SiC homoepitaxial growth through enhanced nitrogen doping concentration in the region. It was found that the epitaxial layer grown on the facet trace region in the substrate significantly suppressed glide motion of BPDs and exhibited a reduced conversion probability of BPDs to threading edge dislocations during the homoepitaxial growth process. Based on these results, the mechanisms that the epilayer grown on a substrate region with a slightly higher nitrogen concentration showed significantly different glide and propagation behaviors of BPDs are discussed.

中文翻译:

4H-SiC衬底中刻面轨迹区对4H-SiC同质外延层基面位错滑移和传播行为的影响

使用 x 射线形貌、高分辨率 x 射线衍射和 4H-SiC 衬底中的刻面轨迹区域对 4H-SiC 同质外延层中基面位错 (BPD) 的滑动和传播行为的影响进行了研究。微拉曼散射光谱。衬底中的刻面痕量区域比衬底中的其他区域具有更高的氮掺杂浓度,这是非常令人感兴趣的,因为它可以通过提高 4H-SiC 同质外延生长过程中的氮掺杂浓度来影响 BPD 的滑行和传播行为。该区域。发现在衬底的小平面迹线区域上生长的外延层显着抑制了 BPD 的滑动运动,并在同质外延生长过程中表现出 BPD 向螺纹边缘位错的转化概率降低。基于这些结果,讨论了在氮浓度略高的衬底区域上生长的外延层显示出明显不同的 BPD 滑动和传播行为的机制。
更新日期:2021-09-08
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