In recent years, power electronics has played a fundamental role in the development of increasingly efficient circuits for energy conversion. The characterization of a Power MOSFET under a gate overstress and the correlation with the reliability performances represent a crucial point in the optimization of the trench technology where the oxidation processes of the gate oxide are critical in terms of uniformity and reproducibility of the thickness. This article explores these aspects with particular attention to the analysis of the electrical overstress effect on aging transistors parameters and the classical TDDB (time dependent dielectric breakdown) test for gate oxide integrity characterization and lifetime extrapolation.

The latter actually trigger oxide breakdown which is not as relevant at operating conditions as parametric degradation which usually occurs much earlier.

Moreover, a possible physical explanation to the adherence of both failure modes (breakdown and transistor aging) to the two typical failure model such as thermochemical model and anode hole injection has been subjected to analysis following fitting methods as did in the past including their reciprocal correlation.

近年来，电力电子在开发日益高效的能量转换电路方面发挥了重要作用。栅极过应力下功率 MOSFET 的表征以及与可靠性性能的相关性代表了优化沟槽技术的关键点，其中栅极氧化物的氧化过程对于厚度的均匀性和再现性至关重要。本文探讨了这些方面，特别关注对老化晶体管参数的电气过应力影响的分析以及用于栅极氧化物完整性表征和寿命外推的经典 TDDB（时间相关介质击穿）测试。

后者实际上会触发氧化物击穿，这在操作条件下不像参数退化那样相关，参数退化通常发生得更早。

此外，对两种故障模式（击穿和晶体管老化）与热化学模型和阳极空穴注入等两种典型故障模型的依从性可能的物理解释已经按照过去的拟合方法进行了分析，包括它们的相互关系.