An aluminum-on-zirconium bilayer is anodized in oxalic acid solution to transform the Al layer into porous anodic alumina (PAA); this is followed by the PAA-assisted re-anodizing of the Zr underlayer at voltages 40–280 V. The process results in an array of amorphous ZrO₂ nanocolumns, 45–330 nm long, partly filling the PAA pores and anchored to a continuous bottom oxide layer under the pores, 20–130 nm thick, comprising a ZrO_1.8 spongelike sublayer superimposed on a ZrO_1.5 compact sublayer. The thicknesses of the nanostructured and bottom oxides increase linearly with re-anodizing voltage, disclosing a low film formation ratio of 1.65 nm V⁻¹, which is impossible with anodic ZrO₂. The amorphous ZrO₂ nanocolumns embedded in the highly resistive amorphous PAA matrix combined with the laminated bottom oxide reveal a nearly ideal dielectric performance in a wide frequency range (10⁻⁴–10⁴ Hz) complemented by the low leakage currents and high breakdown voltages (up to 280 V). The film permittivity may be tuned, from 11 to 20, by combining the anodizing and pore-widening techniques. The advantageous architecture, fabrication approach, and functional properties of the films allow the design of a prototype of an emerging hybrid polymer electrolytic microcapacitor for on-chip integration.

中文翻译：

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用于高级介电应用的自组织纳米结构 ZrO2-Al2O3 阳极薄膜的生长、组成和功能特性

在草酸溶液中对铝-锆双层进行阳极氧化，将铝层转化为多孔阳极氧化铝 (PAA)；然后在 40-280 V 电压下对 Zr 底层进行 PAA 辅助再阳极氧化。该过程产生了一系列无定形 ZrO ₂纳米柱，45-330 nm 长，部分填充 PAA 孔并锚定到连续的孔下方的底部氧化层，20-130 nm 厚，包括叠加在 ZrO _1.5致密亚层上的 ZrO _1.8海绵状亚层。纳米结构和底部氧化物的厚度随再阳极氧化电压线性增加，揭示了 1.65 nm V ^-1的低成膜率，这是阳极 ZrO ₂不可能实现的。无定形氧化锆嵌入高电阻无定形 PAA 基质中的_{2 个}纳米柱与层压底部氧化物相结合，在宽频率范围 (10 ^-4 –10 ⁴  Hz)内显示出近乎理想的介电性能，并辅以低漏电流和高击穿电压（高达 280五）。通过结合阳极氧化和孔加宽技术，可以将薄膜介电常数从 11 调整到 20。薄膜的有利架构、制造方法和功能特性允许设计用于片上集成的新兴混合聚合物电解微电容器的原型。