Sb₂Se₃ thin films have received increasing interest for their applications in optoelectronics. However, technological intervention demands a material-specific understanding of the reactivity to different environments. Both thermal annealing and laser irradiation carried out in an ambient atmosphere are expected to induce changes in the pristine crystallographic phase of Sb₂Se₃, causing the creation of additional secondary phases. Here, we investigate by means of Raman spectroscopy the effect of thermal annealing and laser irradiation at different fluencies on the structural and vibrational properties of Sb₂Se₃ thin films. The vacuum-annealed Sb₂Se₃ thin films at 290 °C and subjected to laser excitation power above 2 mW exhibit a secondary phase, revealing the occurrence of selenization. Further, in situ X-ray diffraction over a broad range of annealing temperatures in N₂ and ambient atmospheres was employed to study the structural properties of the Sb₂Se₃ thin films. In situ XRD performed in a N₂ atmosphere does not show the formation of the Sb₂O₃ cubic phase upon annealing until 500 °C. Conversely, a thermally activated systematic crystallization was observed upon annealing in an ambient atmosphere with the formation of the Sb₂O₃ phase in the temperature range between 280 and 420 °C, until the complete decomposition of the material at 500 °C. Further, the orientation of vertically stacked (hk1) planes remains unchanged under a N₂ atmosphere, while horizontally stacked (hk0) planes dominate the (hk1) planes under ambient atmospheres.

中文翻译：

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Sb2Se3 薄膜热分解的拉曼光谱和原位 XRD 探测

Sb ₂ Se ₃薄膜因其在光电子学中的应用而受到越来越多的关注。然而，技术干预需要对不同环境的反应性有特定的材料理解。预计在环境气氛中进行的热退火和激光照射都会引起 Sb ₂ Se ₃原始晶相的变化，从而产生额外的二次相。在这里，我们通过拉曼光谱研究了不同通量下的热退火和激光照射对 Sb ₂ Se ₃薄膜的结构和振动特性的影响。真空退火 Sb ₂ Se₃薄膜在 290 °C 并受到高于 2 mW 的激光激发功率表现出第二相，揭示了硒化的发生。此外，采用在 N ₂和环境气氛中在很宽的退火温度范围内的原位X 射线衍射来研究 Sb ₂ Se ₃薄膜的结构特性。在N ₂气氛中进行的原位XRD显示，直到 500°C 退火后才形成 Sb ₂ O ₃立方相。相反，在环境气氛中退火时观察到热激活的系统结晶，形成 Sb ₂ O₃相在 280 至 420 °C 的温度范围内，直到材料在 500 °C 下完全分解。此外，在N ₂气氛下垂直堆叠的( hk 1) 平面的取向保持不变，而在环境大气下水平堆叠的( hk 0) 平面支配( hk 1) 平面。