Low-frequency 1/f ^γ noise is ubiquitous, even in high-end electronic devices. Recently, it was found that adsorbed O₂ molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbate noise, we have investigated low-frequency noise, while the mobility of surface adsorbates is varied by temperature. We measured low-frequency current noise in suspended monolayer graphene Corbino samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of suspended graphene, we could resolve a combination of 1/f ^γ and Lorentzian noise induced by the presence of Ne. We find that the 1/f ^γ noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of 1/f noise in metallic systems.

中文翻译：

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由于超低噪声石墨烯平台上散射体的表面扩散引起的电低频 1/fγ 噪声

低频 1/ f  ^γ噪声无处不在，即使在高端电子设备中也是如此。最近，发现吸附的 O ₂分子对超导量子干涉装置中的通量噪声做出了主要贡献。为了阐明这种吸附物噪声的基本原理，我们研究了低频噪声，而表面吸附物的迁移率随温度而变化。我们在吸附的 Ne 原子的影响下测量了悬浮单层石墨烯 Corbino 样品中的低频电流噪声。由于悬浮石墨烯的固有噪声极小，我们可以解决由 Ne 的存在引起的 1/ f  ^γ和洛伦兹噪声的组合。我们发现 1/ f  ^γ噪声是由 Ne 原子的表面扩散和少量 Ne 原子簇的临时形成引起的。我们的结果支持缺陷的聚类动力学与理解金属系统中的 1/ f噪声相关的观点。