${\text{Cu}}_2{\text{OSeO}}_3$Cu2OSeO3${\text{Cu}}_2{\text{OSeO}}_3$ single crystals are grown with an optimized chemical vapor transport technique using ${\text{SeCl}}_4$SeCl4${\text{SeCl}}_4$ as a transport agent (TA). The optimized growth method allows to selectively produce large high-quality single crystals. The method is shown to consistently produce ${\text{Cu}}_2{\text{OSeO}}_3$Cu2OSeO3${\text{Cu}}_2{\text{OSeO}}_3$ crystals of maximum size 8 × 7 × 4 mm with a transport duration of around three weeks. It is found that this method, with ${\text{SeCl}}_4$SeCl4${\text{SeCl}}_4$ as TA, is more efficient and simple compared with the commonly used growth techniques reported in literature with HCl gas as TA. The ${\text{Cu}}_2{\text{OSeO}}_3$Cu2OSeO3${\text{Cu}}_2{\text{OSeO}}_3$ crystals have very high quality and their absolute structures are fully determined by simple single-crystal X-ray diffraction. Enantiomeric crystals with either left- or right-handed chiralities are observed. The magnetization and ferromagnetic resonance data show the same magnetic phase diagram as reported earlier.

中文翻译：

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非中心对称 Cu2OSeO3 晶体的生长和螺旋度

${\text{铜}}_2{\text{氧化硅}}_3$铜2氧化硅3${\text{Cu}}_2{\text{OSeO}}_3$使用优化的化学气相传输技术生长单晶${\text{氯化钠}}_4$氯化钠4${\text{SeCl}}_4$作为运输代理（TA）。优化的生长方法允许选择性地生产大的高质量单晶。该方法被证明可以始终如一地产生${\text{铜}}_2{\text{氧化硅}}_3$铜2氧化硅3${\text{Cu}}_2{\text{OSeO}}_3$最大尺寸为 8 × 7 × 4 mm 的晶体，运输时间约为三周。发现该方法与${\text{氯化钠}}_4$氯化钠4${\text{SeCl}}_4$作为 TA，与文献中报道的以 HCl 气体作为 TA 的常用生长技术相比，更为有效和简单。这${\text{铜}}_2{\text{氧化硅}}_3$铜2氧化硅3${\text{Cu}}_2{\text{OSeO}}_3$晶体具有非常高的质量，其绝对结构完全由简单的单晶 X 射线衍射确定。观察到具有左手或右手手性的对映体晶体。磁化强度和铁磁共振数据显示与之前报道的相同的磁相图。