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Origin of anomalous enhancement of the absorption coefficient in a PN junctionProject supported by the National Natural Science Foundation of China (Grant Nos. 61804176, 61991441, and 62004218), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB01000000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences.
Chinese Physics B ( IF 1.7 ) Pub Date : 2021-09-03 , DOI: 10.1088/1674-1056/ac0791
Xiansheng Tang 1, 2, 3, 4 , Baoan Sun 1, 3, 5 , Chen Yue 1, 2, 3, 4 , Xinxin Li 1, 2, 3, 4 , Junyang Zhang 1, 2, 3, 4 , Zhen Deng 1, 2, 4 , Chunhua Du 1, 2, 4 , Wenxin Wang 1, 2, 4, 5 , Haiqiang Jia 1, 2, 4, 5 , Yang Jiang 1, 2, 4 , Weihua Wang 1, 3, 5 , Hong Chen 1, 2, 3, 4, 5
Affiliation  

The absorption coefficient is usually considered as a constant for certain materials at the given wavelength. However, recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction. The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure. Here, we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers. Based on the Fokker–Planck theory, a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed. It could predict the experimental data well. Our results can give new ideas to design photoelectric devices.

更新日期:2021-09-03
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