Layered ReS₂ with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS₂ are still very limited. Here, we studied the anisotropic photoresponse of layered ReS₂ phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120 and 90, respectively. We further measured the angle-resolved photoresponse of a ReS₂ transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A⋅W⁻¹ along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light–ReS₂ interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS₂ transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.

具有直接带隙和强面内各向异性的分层 ReS ₂显示出开发高性能角分辨光电探测器和光电器件的巨大潜力。然而，ReS ₂的角度相关光响应的系统表征仍然非常有限。在这里，我们深入研究了分层 ReS ₂光电晶体管的各向异性光响应。测试天使分辨拉曼光谱和场效应迁移率以确认其电和光学各向异性之间的不一致，分别为 120 和 90。我们进一步测量了具有 6 个对角配对电极的 ReS ₂晶体管的角度分辨光响应。最大光响应度超过 0.515 A⋅W ^-1沿b轴，比沿与b轴垂直的方向大约 3.8 倍，这与光学各向异性方向一致。沿两个各向异性轴的入射波长和功率相关光响应测量进一步表明b轴具有更强的光-ReS ₂相互作用，这解释了各向异性光响应。我们还观察到 ReS _{2 的}角度相关光阻切换行为晶体管，这导致角分辨光电晶体管存储器的形成。它具有简化的结构以创建通过偏振光进行空间控制的动态光电电阻随机存取存储器。这种能力在偏振光提供的宽光谱灵敏度范围内对人工神经网络 (ANN) 的实时模式识别和光配置具有巨大潜力。