BaZrO₃ (BZO) one-dimensional artificial pinning centers (1D-APCs) aligned along the c-axis of the YBa₂Cu₃O₇ (YBCO) have been adopted to enhance the magnetic vortex pinning in BZO/YBCO nanocomposite films. However, the pinning force density F _p of the BZO 1D-APCs remains moderate at temperatures near 77 K. A hypothesis of the major limiting factor is the defective BZO 1D-APCs/YBCO interface as a direct consequence of the large interfacial strain originated from the BZO/YBCO lattice mismatch of ∼7.7%. Herein, we explore enlarging the c-axis of the YBCO dynamically to reduce the lattice mismatch and hence to prevent formation of the defective BZO 1D-APCs/YBCO interface. Specifically, the c-axis enlargement was achieved by partial replacement of Cu with Ca on the YBCO lattice using strain-directed Ca diffusion into YBCO from two Ca_0.3Y_0.7Ba₂Cu₃O_{7− x} (CaY-123) spacers of only 10 nm in thickness inserted into the 2 vol% BZO 1D-APC/YBCO nanocomposite thin films of ∼150 nm in total thickness. The achieved elongated c-axis is attributed to the formation of stacking faults induced by Ca-replacement of Cu on YBCO lattice. The reduced BZO/YBCO lattice mismatch allows formation of a coherent BZO 1D-APC/YBCO interface with negligible defects. This leads to an enhanced F _p value up to 98 GN m⁻³ at 65 K, which is 70% higher than that of the reference 2 vol% BZO 1D-APC/YBCO sample. Furthermore, the benefit of the enhanced pinning of the BZO 1D-APCs with a coherent interface with YBCO can be extended to a large angular range of the magnetic field orientation. This study reveals the significant effect of the BZO/YBCO interface on the pinning efficiency of BZO 1D-APCs and provides a promising approach to achieve a coherent interface in BZO/YBCO nanocomposite films.

BaZrO ₃ (BZO) 一维人工钉扎中心 (1D-APC) 沿YBa ₂ Cu ₃ O ₇ (YBCO)的c轴排列，已被用于增强 BZO/YBCO 纳米复合薄膜中的磁涡旋钉扎。然而，BZO 1D-APCs的钉扎力密度F _p在接近 77 K 的温度下保持适中。 主要限制因素的假设是有缺陷的 BZO 1D-APCs/YBCO 界面，这是源于大界面应变的直接结果BZO/YBCO 晶格失配约为 7.7%。在这里，我们探索扩大c YBCO 的 - 轴动态减少晶格失配，从而防止形成有缺陷的 BZO 1D-APC/YBCO 界面。具体而言，通过使用应变引导的 Ca 从两个 Ca _0.3 Y _0.7 Ba ₂ Cu ₃ O _{7 - x} (CaY-123) 间隔物将 YBCO 晶格上的 Cu 部分置换到 YBCO 中来实现c轴扩大。将 10 nm 的厚度插入到总厚度约为 150 nm 的 2 vol% BZO 1D-APC/YBCO 纳米复合薄膜中。获得的拉长c 轴归因于在 YBCO 晶格上由 Ca 取代 Cu 引起的堆垛层错的形成。减少的 BZO/YBCO 晶格失配允许形成具有可忽略缺陷的相干 BZO 1D-APC/YBCO 界面。这导致F _p值在 65 K 时提高至 98 GN m ^-3，比参考 2 vol% BZO 1D-APC/YBCO 样品高 70%。此外，具有与 YBCO 相干界面的 BZO 1D-APC 增强钉扎的好处可以扩展到磁场方向的大角度范围。该研究揭示了 BZO/YBCO 界面对 BZO 1D-APC 的钉扎效率的显着影响，并为在 BZO/YBCO 纳米复合薄膜中实现相干界面提供了一种有前景的方法。