This article demonstrates the novel designs of Si and GaAs wafer-based double-heterojunction (DH) solar cells using SCAPS-1D simulator. Simple five-layer solar cells are proposed here: cells comprised of a cathode metal layer, three layers of semiconductor materials in the III–V, II–VI and group IV families--and a layer of anode metal. The device structures have been optimized for the analysis of the power-conversion efficiency (PCE) of the Si and GaAs solar cells considering high defect densities at and near each heterojunction. The PCEs predicted are 38% and 38.9% for n-ZnSe/p-Si/p ⁺-Al_0.8Ga_0.2Sb and n-ZnSe/p-GaAs/p ⁺-AlAs_0.9Sb_0.1 cells, respectively which stay entirely within the PCE limits set by the Shockley–Queisser theory of multi-junction cell. These results reveal that high efficiency and hence cost-effective Si and GaAs wafer-based DH solar cells can be fabricated in the near future.

本文展示了使用 SCAPS-1D 模拟器的基于 Si 和 GaAs 晶片的双异质结 (DH) 太阳能电池的新颖设计。这里提出了简单的五层太阳能电池：电池由阴极金属层、III-V、II-VI 和 IV 族半导体材料的三层和一层阳极金属组成。考虑到每个异质结处和附近的高缺陷密度，器件结构已针对分析 Si 和 GaAs 太阳能电池的功率转换效率 (PCE) 进行了优化。对于n -ZnSe/ p -Si/ p ⁺ -Al _0.8 Ga _0.2 Sb 和n -ZnSe/ p -GaAs / p ^+，预测的 PCE 分别为 38% 和 38.9%-AlAs _0.9 Sb _0.1电池，分别完全保持在多结电池的肖克利-奎瑟理论设定的 PCE 限制内。这些结果表明，可以在不久的将来制造高效率且因此具有成本效益的基于 Si 和 GaAs 晶片的 DH 太阳能电池。